Method of making surface emission type semiconductor laser
文献类型：专利
| 作者 | MORI, KATSUMI; ASAKA, TATSUYA; IWANO, HIDEAKI; KONDO, TAKAYUKI |
| 发表日期 | 1996-12-24 |
| 专利号 | US5587335 |
| 著作权人 | SEIKO EPSON CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making surface emission type semiconductor laser |
| 英文摘要 | In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof. The multilayered dielectric mirror is disposed at the light exit port of a light exit side electrode. To increase the reflectivity below the light exit side electrode, a multilayered semiconductor mirror may be formed in the column-like portion at a position nearer the light exit side than the cladding layer. |
| 公开日期 | 1996-12-24 |
| 申请日期 | 1995-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44573]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORPORATION |
| 推荐引用方式 GB/T 7714 | MORI, KATSUMI,ASAKA, TATSUYA,IWANO, HIDEAKI,et al. Method of making surface emission type semiconductor laser. US5587335. 1996-12-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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