Semiconductor laser with mesa stripe waveguide structure
文献类型：专利
| 作者 | OHBA, YASUO; ISHIKAWA, MASAYUKI; YAMAMOTO, MOTOYUKI; WATANABE, YUKIO; SUGAWARA, HIDETO |
| 发表日期 | 1988-12-20 |
| 专利号 | US4792958 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with mesa stripe waveguide structure |
| 英文摘要 | There is disclosed a semiconductor layer which can emit a continuous laser beam in a visible wavelength range. The laser has an n-GaAs substrate. On this substrate, an n-InGaAlP cladding layer, an active layer, and p-InGaAlP cladding layers are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer is provided, defining a laser beam-guiding channel. A thin p-InGaAlP contact layer and a mesa-shaped, p-GaAs contact layer are formed on the top surface of the upper cladding layer. Two n-type semiconductive, current-blocking layers cover the slanted sides of the upper, mesa-shaped cladding layer and also the contact layer. They are made of the same n-GaAs compound semiconductor material as the substrate. |
| 公开日期 | 1988-12-20 |
| 申请日期 | 1987-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | OHBA, YASUO,ISHIKAWA, MASAYUKI,YAMAMOTO, MOTOYUKI,et al. Semiconductor laser with mesa stripe waveguide structure. US4792958. 1988-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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