Semiconductor laser and method for fabricating semiconductor laser
文献类型：专利
| 作者 | HIROTAKA, , KIZUKI; SHOICHI, , KARAKIDA |
| 发表日期 | 1998-01-28 |
| 专利号 | GB2287124B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for fabricating semiconductor laser |
| 英文摘要 | A method fabricating a semiconductor laser includes growing a semiconductor multilayer structure comprising a first conductivity type cladding layer (2), an active layer (3), a second conductivity type cladding layer (4), and a first conductivity type current blocking layer (5) on a first conductivitytype substrate (1); forming an insulating film having a stripe-shaped opening on a part of the multi layer structure; using the insulating film as a mask, etching the multilayer structure thereby forming a narrow stripe-shaped V groove to serve as a current path for introducing current into the active layer (3); growing a second conductivity type semiconductor layer (8) in the stripe-shaped V groove (12); and growing a second conductivity type contact layer (11) over the wafer. |
| 公开日期 | 1998-01-28 |
| 申请日期 | 1995-02-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44581]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HIROTAKA, , KIZUKI,SHOICHI, , KARAKIDA. Semiconductor laser and method for fabricating semiconductor laser. GB2287124B. 1998-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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