Two-wavelength semiconductor laser device and method for fabricating the same
文献类型：专利
| 作者 | TAKAYAMA, TORU; SATOH, TOMOYA; KIDOGUCHI, ISAO |
| 发表日期 | 2009-11-03 |
| 专利号 | US7613220 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Two-wavelength semiconductor laser device and method for fabricating the same |
| 英文摘要 | A first and second semiconductor laser, which comprise buffer layers, cladding layers, quantum well active layers, and cladding layers integrated on the substrate and have a stripe geometry, are integrated on a common substrate, with the quantum well active layers in the vicinity of the cavity facets disordered by impurity diffusion. Relationships λ1>λb1, λ2>λb2, λ1>λ2, and E1≦E2 are satisfied, where λ1 and λ2 are defined, respectively, as the emission wavelengths of the active layers of the first and second semiconductor lasers, E1 and E2, respectively, as the forbidden band energies of the buffer layers of the first and second semiconductor lasers, and λb1 and λb2 respectively as the wavelengths corresponding to the forbidden band energies of the buffer layers of the first and second semiconductor lasers. The generation of reactive currents flowing through the window portions, which is caused by the intensification of disordering performed for window region formation, can be appropriately suppressed for both types of integrated semiconductor lasers. |
| 公开日期 | 2009-11-03 |
| 申请日期 | 2007-10-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44593]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | TAKAYAMA, TORU,SATOH, TOMOYA,KIDOGUCHI, ISAO. Two-wavelength semiconductor laser device and method for fabricating the same. US7613220. 2009-11-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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