Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes and a process for their fabrication
文献类型：专利
| 作者 | MAUK, MICHAEL G. |
| 发表日期 | 2000-08-29 |
| 专利号 | US6111276 |
| 著作权人 | ASTRO POWER, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes and a process for their fabrication |
| 英文摘要 | The invention relates to a device structure and crystal growth process for making the same, whereby single-crystal semiconductor layers are formed over metal or composite layers. The metal layers function as buried reflectors to enhance the performance of LEDs, solar cells, and photodiodes. The structure may also have application to laser diodes. The structures are made by a modification of a well-established metallic solution growth process. The lateral overgrowth process can be enhanced by imposing an electric current at the growth interface (termed liquid-phase electro-epitaxy). However, the use of an electric current is not crucial. The epitaxial lateral overgrowth technique was also applied to silicon growth on metal-masked silicon substrates. |
| 公开日期 | 2000-08-29 |
| 申请日期 | 1998-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44595]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ASTRO POWER, INC. |
| 推荐引用方式 GB/T 7714 | MAUK, MICHAEL G.. Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes and a process for their fabrication. US6111276. 2000-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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