Semiconductor laser device with window regions
文献类型：专利
| 作者 | TAKIGUCHI, HARUHISA; YANO, SEIKI; INOGUCHI, KAZUHIKO; KUDO, HIROAKI; NAKANISHI, CHITOSE; OKUMURA, TOSHIYUKI; SUGAHARA, SATOSHI |
| 发表日期 | 1994-09-06 |
| 专利号 | US5345460 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device with window regions |
| 英文摘要 | A semiconductor laser device with window regions according to the present invention is provided, in which a double hetero structure including cladding layers and an active layer sandwiched by the cladding layers is formed on a semiconductor substrate, the double hetero structure is buried in burying layers with a bandgap larger than that of the active layer, and the burying layers form window regions situated at both end facets of the double hetero structure, wherein the window regions have a waveguide structure including a plurality of semiconductor layers with different bandgaps. |
| 公开日期 | 1994-09-06 |
| 申请日期 | 1992-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44599]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKIGUCHI, HARUHISA,YANO, SEIKI,INOGUCHI, KAZUHIKO,et al. Semiconductor laser device with window regions. US5345460. 1994-09-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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