Group III nitride semiconductor element and epitaxial wafer
文献类型：专利
| 作者 | YOSHIZUMI, YUSUKE; ENYA, YOHEI; UENO, MASAKI; NAKANISHI, FUMITAKE |
| 发表日期 | 2013-03-05 |
| 专利号 | US8391327 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride semiconductor element and epitaxial wafer |
| 英文摘要 | A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base. |
| 公开日期 | 2013-03-05 |
| 申请日期 | 2012-01-04 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44601]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YOSHIZUMI, YUSUKE,ENYA, YOHEI,UENO, MASAKI,et al. Group III nitride semiconductor element and epitaxial wafer. US8391327. 2013-03-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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