Semiconductor laser device with multi-directional reflector arranged therein
文献类型：专利
| 作者 | KUROBE, ATSUSHI; TEZUKA, TSUTOMU; SADAMASA, TETSUO; KUSHIBE, MITSUHIRO; KAWAKYU, YOSHITA |
| 发表日期 | 1995-07-11 |
| 专利号 | US5432812 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device with multi-directional reflector arranged therein |
| 英文摘要 | A microcavity semiconductor laser disclosed therein includes a double-heterostructure section including an intermediate active layer sandwiched between a first or lower cladding layer and a second or upper cladding layer above a semiconductive substrate. A first multi-layered reflector section is arranged between the substrate and the double-heterostructure section to have its reflectance which becomes maximum near the oscillation wavelength of the laser. The upper cladding layer is semi-spherically formed. A three-dimensional optical reflector covers the double-heterostructure section, for controlling spontaneous emission obtained in the double-heterostructure section along various directions, and for increasing the coupling ratio of spontaneous emission with a specific laser mode, thereby to decrease the threshold current. |
| 公开日期 | 1995-07-11 |
| 申请日期 | 1993-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44604]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | KUROBE, ATSUSHI,TEZUKA, TSUTOMU,SADAMASA, TETSUO,et al. Semiconductor laser device with multi-directional reflector arranged therein. US5432812. 1995-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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