Multiquantum-well semiconductor laser
文献类型：专利
| 作者 | SASAKI, YOSHIHIRO |
| 发表日期 | 1998-04-07 |
| 专利号 | US5737353 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multiquantum-well semiconductor laser |
| 英文摘要 | A multiquantum-well semiconductor laser having a long wavelength, for use in optical communication systems, comprises an active region including a plurality of quantum-well layers each made of InGaAs or InGaAsP, and a plurality of barrier laminates each made of InGaAsP having a bandgap wider than that of the quantum-well layers. Each barrier laminate includes three barrier layers of different compositions of InGaAsP having different bandgaps. Each barrier laminate has a thickness such that the wave functions of carriers in adjacent quantum-well layers do not overlap each other, while carriers supplied to the active region can be effectively injected into the quantum-well layers, thereby obtaining a low threshold current and a high slope efficiency. |
| 公开日期 | 1998-04-07 |
| 申请日期 | 1997-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44607]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | SASAKI, YOSHIHIRO. Multiquantum-well semiconductor laser. US5737353. 1998-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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