Photoluminescence method of testing double heterostructure wafers
文献类型：专利
| 作者 | BESOMI PAUL RAYMOND; DEGANI JOSHUA; WILT DANIEL PAUL |
| 发表日期 | 1987-04-16 |
| 专利号 | DE3370191D1 |
| 著作权人 | WESTERN ELECTRIC COMPANY INCORPORATED |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Photoluminescence method of testing double heterostructure wafers |
| 英文摘要 | Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs. |
| 公开日期 | 1987-04-16 |
| 申请日期 | 1983-08-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WESTERN ELECTRIC COMPANY INCORPORATED |
| 推荐引用方式 GB/T 7714 | BESOMI PAUL RAYMOND,DEGANI JOSHUA,WILT DANIEL PAUL. Photoluminescence method of testing double heterostructure wafers. DE3370191D1. 1987-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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