Method for making an ohmic contact for p-type group II-VI compound semiconductors
文献类型：专利
| 作者 | QIU, JUN; CHENG, HWA; HAASE, MICHAEL A.; DEPUYDT, JAMES M. |
| 发表日期 | 1993-05-25 |
| 专利号 | US5213998 |
| 著作权人 | MINNESOTA MINING AND MANUFACTURING COMPANY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for making an ohmic contact for p-type group II-VI compound semiconductors |
| 英文摘要 | A method for producing an ohmic contact to a p-type ZnSe semiconductor body in a molecular beam epitaxy chamber. Zinc, thermally cracked Se2 and nitrogen are injected into the chamber. A ZnSe contact layer is grown by heating the semiconductor body to a temperature less than 250 DEG C., but high enough to promote crystalline growth of the layer doped with nitrogen to a net acceptor concentration of at least 1x1018 cm-3. |
| 公开日期 | 1993-05-25 |
| 申请日期 | 1991-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44627]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MINNESOTA MINING AND MANUFACTURING COMPANY |
| 推荐引用方式 GB/T 7714 | QIU, JUN,CHENG, HWA,HAASE, MICHAEL A.,et al. Method for making an ohmic contact for p-type group II-VI compound semiconductors. US5213998. 1993-05-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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