Nitride-based laser diode with GaN waveguide/cladding layer
文献类型：专利
| 作者 | KNEISSL, MICHAEL A.; BOUR, DAVID P.; ROMANO, LINDA T.; VAN DE WALLE, CHRISTIAN G. |
| 发表日期 | 2006-10-17 |
| 专利号 | US7123637 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride-based laser diode with GaN waveguide/cladding layer |
| 英文摘要 | A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well. |
| 公开日期 | 2006-10-17 |
| 申请日期 | 2003-03-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44633]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | KNEISSL, MICHAEL A.,BOUR, DAVID P.,ROMANO, LINDA T.,et al. Nitride-based laser diode with GaN waveguide/cladding layer. US7123637. 2006-10-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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