半導体レーザ素子とその製造方法
文献类型：专利
| 作者 | 中西 千登勢; 瀧口 治久; 工藤 裕章; 菅原 聰 |
| 发表日期 | 2000-06-30 |
| 专利号 | JP3084042B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子とその製造方法 |
| 英文摘要 | PURPOSE:To enable a semiconductor laser element to stably oscillate laser rays in a single longitudinal mode and to efficiently emit laser rays in a single longitudinal mode and to efficiently emit laser rays of high power by a method wherein a rugged part is formed through a wet etching method and a dry etching method. CONSTITUTION:An optical waveguide layer 5 is formed on the upside of a semiconductor substrate 1, and a laminated structure 12 where a first clad layer 2, an active layer 3, and a second clad layer 6 are laminated in this sequence is provided onto a prescribed region C on the layer 5. A rugged part of periodic structure possessed of a certain period is provided to regions A and B on the layer 5 where the structure 12 is not formed to form a first diffraction grating structure 13 and a second diffraction grating structure 14. In this case, the surface of the region A is etched through a wet etching method and the surface of the region B is etched by a dry etching method. The structure 13 is formed into a periodic structure of sine waves in cross section, and the structure 14 is formed into a periodic structure of rectangular waves in cross section. By this setup, a semiconductor laser of this design can efficiently emit laser rays of high power. |
| 公开日期 | 2000-09-04 |
| 申请日期 | 1990-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44639]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 中西 千登勢,瀧口 治久,工藤 裕章,等. 半導体レーザ素子とその製造方法. JP3084042B2. 2000-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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