Production of semiconductor devices
文献类型：专利
| 作者 | HOUGHTON, ANDREW J. N. |
| 发表日期 | 1987-03-03 |
| 专利号 | US4647339 |
| 著作权人 | BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY BRITISH TELECOM CENTRE A BRITISH COMPANY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Production of semiconductor devices |
| 英文摘要 | Onto the surface of an initial semiconductor structure 1, 2, 3, 4 is deposited a layer of an organic material 5 having a window 9. Layers 6', 7', and 8' are deposited on the exposed surface of the semiconductor, of which 8' is an ion-beam resisting material. Corresponding layers 6, 7, and 8 are deposited on the organic material. The organic material is then lifted off together with layers 6, 7, and 8. Ion-beam milling of the semiconductor material to either side of 8' followed by removal of any remnant of 8' results in a structure having an elevated semiconductor portion carrying an electrode 6', 7'. Preferred materials are gallium arsenide for layers 1 and 3, gallium aluminium arsenides for layers 2 and 4, titanium for layers 6' and 8', and gold for layer 7'. The invention can be applied to the production of rib waveguide electrooptic devices, including phase modulators. |
| 公开日期 | 1987-03-03 |
| 申请日期 | 1985-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44642]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY BRITISH TELECOM CENTRE A BRITISH COMPANY |
| 推荐引用方式 GB/T 7714 | HOUGHTON, ANDREW J. N.. Production of semiconductor devices. US4647339. 1987-03-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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