Infrared emitting device with dislocation free layer
文献类型：专利
| 作者 | MATSUSHIMA, YUICHI; SAKAI, KAZUO; AKIBA, SHIGEYUKI; UTAKA, KATSUYUKI |
| 发表日期 | 1990-04-17 |
| 专利号 | US4918496 |
| 著作权人 | KDDI CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Infrared emitting device with dislocation free layer |
| 英文摘要 | An infrared emitting device for use in the 2 to 3 mu m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 mu m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate. |
| 公开日期 | 1990-04-17 |
| 申请日期 | 1988-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44644]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KDDI CORPORATION |
| 推荐引用方式 GB/T 7714 | MATSUSHIMA, YUICHI,SAKAI, KAZUO,AKIBA, SHIGEYUKI,et al. Infrared emitting device with dislocation free layer. US4918496. 1990-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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