光電子集積回路の製造方法
文献类型：专利
| 作者 | 寺門 知二 |
| 发表日期 | 1994-02-16 |
| 专利号 | JP1994012809B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光電子集積回路の製造方法 |
| 英文摘要 | PURPOSE:To improve the performance and reproducibility by a method wherein, after coating step difference regions with thick film resist, electrode patterns of a transistor are formed using a thin film resist. CONSTITUTION:A PIN photodiode 2 formed on the lower step part of a substrate 1 having a step difference and a field effect transistor 3 formed on the upper step part of the substrate 1 are monolithically integrated and after coating the step difference parts with a thick film resist 7, electrodes 12-14 of the transistor 3 are formed by the photolithography using a thin film resist 18. Through these procedures, fine electrodes can be manufactured in high reproducibily so that high performance optoelectronic integrated circuits may be manufactured in high reproducibility. |
| 公开日期 | 1994-02-16 |
| 申请日期 | 1987-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44645]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | 寺門 知二. 光電子集積回路の製造方法. JP1994012809B2. 1994-02-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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