Semiconductor laser with improved oscillation wavelength reproducibility
文献类型：专利
| 作者 | MANNOH, MASAYA; OHNAKA, KIYOSHI |
| 发表日期 | 1994-09-06 |
| 专利号 | US5345463 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with improved oscillation wavelength reproducibility |
| 英文摘要 | A lateral mode control type of semiconductor laser has a high-yield structure having a long life and improved oscillation wavelength reproducibility. A diffusion limit layer formed of an undoped Ga0.5In0.5P layer and an undoped (Al0.6Ga0.4)0.5In0.5P layer is provided between a p-(Al0.6Ga0.4)0.5In0.5P clad layer and an undoped Ga0.5In0.5P active layer. The diffusion limit layer has a diffusion coefficient smaller than that of the clad layer. Impurity Zn diffused from the p-(Al0.6Ga0.4)0.5In0.5P clad layer during crystal growth or working is trapped in the undoped Ga0.5In0.5P layer almost entirely. A part of the impurity Zn diffuses in the undoped (Al0.6Ga0.4)0.5In0.5P layer thereunder but does not reach the undoped Ga0.5In0.5P active layer. |
| 公开日期 | 1994-09-06 |
| 申请日期 | 1993-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44650]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | MANNOH, MASAYA,OHNAKA, KIYOSHI. Semiconductor laser with improved oscillation wavelength reproducibility. US5345463. 1994-09-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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