III nitride compound semiconductor element an electrode forming method
文献类型：专利
| 作者 | SHIBATA, NAOKI; UEMURA, TOSHIYA; ASAI, MAKOTO; KOIDE, YASUO; MURAKAMI, MASANORI |
| 发表日期 | 2004-10-19 |
| 专利号 | US6806571 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III nitride compound semiconductor element an electrode forming method |
| 英文摘要 | An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment. |
| 公开日期 | 2004-10-19 |
| 申请日期 | 2003-02-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHIBATA, NAOKI,UEMURA, TOSHIYA,ASAI, MAKOTO,et al. III nitride compound semiconductor element an electrode forming method. US6806571. 2004-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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