Group III nitride compound semiconductor on silicon and an epitaxial method of manufacturing the same
文献类型：专利
| 作者 | KOIDE, NORIKATSU; KATO, HISAKI |
| 发表日期 | 2011-11-30 |
| 专利号 | EP1054442B1 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride compound semiconductor on silicon and an epitaxial method of manufacturing the same |
| 英文摘要 | A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1-x-yN (0≦x≦1, 0≦y≦ 1, 0≦x+y≦1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2 layer, and grows epitaxially on the SiO2 layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained. |
| 公开日期 | 2011-11-30 |
| 申请日期 | 2000-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44659]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | KOIDE, NORIKATSU,KATO, HISAKI. Group III nitride compound semiconductor on silicon and an epitaxial method of manufacturing the same. EP1054442B1. 2011-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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