Buried heterostructure semiconductor laser with high-resistivity semiconductor layer for current confinement
文献类型：专利
| 作者 | SUGOU, SHIGEO; YANASE, TOMOO |
| 发表日期 | 1989-03-21 |
| 专利号 | US4815083 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried heterostructure semiconductor laser with high-resistivity semiconductor layer for current confinement |
| 英文摘要 | An improved buried heterostructure semiconductor laser comprises high resistive burying layers positioned at both sides of an active region so that the high speed modulation is possible to be performed and the higher quantum efficiency is obtained for the reason why the capacitance and leakage current are diminished. A further improved buried heterostructure semiconductor laser comprises spacer layers between an active region and respective high resistive burying layers so that the reliability is maintained to be high for the reason why the diffusion of an impurity is avoided from the respective high resistive burying layers to the active region. Further, an improved process for the fabrication of a buried heterostructure semiconductor laser comprises steps of a buried heterostructure semiconductor laser comprises steps of forming mesa stripe including an active region on the upper portion of a double heterostructure and forming high resistive burying layers to be positioned at both sides of the active region. |
| 公开日期 | 1989-03-21 |
| 申请日期 | 1986-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44663]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | SUGOU, SHIGEO,YANASE, TOMOO. Buried heterostructure semiconductor laser with high-resistivity semiconductor layer for current confinement. US4815083. 1989-03-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。