Superlattice cladding layers for mid-infrared lasers
文献类型：专利
| 作者 | HASENBERG, THOMAS C.; CHOW, DAVID H. |
| 发表日期 | 1996-11-19 |
| 专利号 | US5577061 |
| 著作权人 | HUGHES ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Superlattice cladding layers for mid-infrared lasers |
| 英文摘要 | A mid-IR laser is provided having novel AlAs/AlxGa1-xSb or InAs/AlxGa1-xSb superlattice cladding regions. The arsenide layers of the n-type cladding region are doped n-type, utilizing silicon, and may be used with conventional active region materials, such as InAszSb1-z and InwGa1-wAsySb1-y. The novel cladding regions can be deposited without the use of Group VI elements, such as Te, which are not preferred source materials for MBE growth. Furthermore, the need for quaternary layers, such as AlxGa1-xAsySb1-y, used in the prior art devices, is eliminated; consequently, the need for precise control of two Group V fluxes (As and Sb) is eliminated. |
| 公开日期 | 1996-11-19 |
| 申请日期 | 1994-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HUGHES ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | HASENBERG, THOMAS C.,CHOW, DAVID H.. Superlattice cladding layers for mid-infrared lasers. US5577061. 1996-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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