Double heterojunction semiconductor laser having improved high-frequency characteristics
文献类型：专利
| 作者 | MEULEMAN, LAMBERTUS J.; VALSTER, ADRIAAN |
| 发表日期 | 1987-06-30 |
| 专利号 | US4677634 |
| 著作权人 | JDS UNIPHASE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Double heterojunction semiconductor laser having improved high-frequency characteristics |
| 英文摘要 | A semiconductor laser of the double heterojunction (DH) type having a current-confining buried blocking layer. According to the invention, a high-resistance region having a disturbed crystal structure is present outside and on either side of the strip-shaped active region and extends at least throughout the thickness of the blocking layer. As a result, the lateral leakage currents and the parasitic capacitances are reduced so that the laser can be used at frequencies considerably higher than 1 GHz. The high-resistance region is preferably obtained by protron bombardment. The invention is particularly advantageous in DCPBH lasers for optical communication. |
| 公开日期 | 1987-06-30 |
| 申请日期 | 1985-03-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JDS UNIPHASE CORPORATION |
| 推荐引用方式 GB/T 7714 | MEULEMAN, LAMBERTUS J.,VALSTER, ADRIAAN. Double heterojunction semiconductor laser having improved high-frequency characteristics. US4677634. 1987-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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