Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device
文献类型：专利
| 作者 | KANO, TAKASHI; OHBO, HIROKI; HAYASHI, NOBUHIKO |
| 发表日期 | 2004-11-23 |
| 专利号 | US6821807 |
| 著作权人 | EPISTAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device |
| 英文摘要 | In the manufacture of a semiconductor laser device, a low temperature buffer layer is grown on a sapphire substrate at a growth rate of 25 to 30 Å/sec. On the low temperature buffer layer, an n-GaN layer, a anti-crack layer, an n-cladding layer, an n-guide layer, an MQW active layer, a p-carrier blocking layer, a p-guide layer, a p-cladding layer and a p-contact layer are grown in this order. The growth of the low temperature buffer layer at the high growth rate allows a good low temperature buffer layer to be stably provided with good reproducibility. Thus, good crystallinity and electrical characteristics can stably be provided in the above layers. |
| 公开日期 | 2004-11-23 |
| 申请日期 | 2001-08-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44676]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPISTAR CORPORATION |
| 推荐引用方式 GB/T 7714 | KANO, TAKASHI,OHBO, HIROKI,HAYASHI, NOBUHIKO. Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device. US6821807. 2004-11-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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