導波路を有する化合物半導体レーザー装置
文献类型：专利
| 作者 | 加藤 尚範; 後藤 秀樹; 下山 謙司; 長尾 哲; 井上 優一 |
| 发表日期 | 1998-05-15 |
| 专利号 | JP2781182B2 |
| 著作权人 | 三菱化学株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 導波路を有する化合物半導体レーザー装置 |
| 英文摘要 | PURPOSE:To prevent a mirror from absorbing light, thus resulting in self-destruction by providing a waveguide path so that laser oscillation light may not be absorbed by one area from both edges of a resonator to the inside and providing a non- absorption reflection mirror at both edge surfaces of the laser resonator. CONSTITUTION:Stripe grooves 5 and 6 with a depth of approximately 0.8mum are formed in parallel to the direction and then undoped Al0.42Ga0.58As layers 7 and 8 are formed on the stripe grooves 5 and 6 by approximately 0.8mum. A stripe groove 9 with a depth of 0.8mum is formed for the direction . Then, a stripe groove which is narrower than the gap between the stripes 7 and 8 is formed in parallel to the direction . And then, an n-Al0.35Ga0.65As layer 10 is selectively formed by a growth method. Then, a P-Al0.35Ga0.65As layer 11 is also embedded and cleavage is made at the inside of a layer embedded in parallel to the direction , thus forming a waveguide edge surface. Since the undoped layers 7 and 8 have smaller reflection factor than that of an active layer 3, they function as a waveguide path and do not absorb laser oscillation light and function as a layer for preventing deterioration of edge surface since the band gap is large. |
| 公开日期 | 1998-07-30 |
| 申请日期 | 1988-08-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44688]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱化学株式会社 |
| 推荐引用方式 GB/T 7714 | 加藤 尚範,後藤 秀樹,下山 謙司,等. 導波路を有する化合物半導体レーザー装置. JP2781182B2. 1998-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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