Method of fabricating modulator integrated semiconductor laser device
文献类型：专利
| 作者 | TADASHI, KIMURA; YUTAKA, MIHASHI; KATUHIKO, GOTOH; TAKUSHI, ITAGAKI |
| 发表日期 | 1997-08-13 |
| 专利号 | GB2281441B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating modulator integrated semiconductor laser device |
| 英文摘要 | In a method of fabricating a modulator integrated semiconductor laser device, a semiconductor layer (4) having first and second regions (A, B) of different crystal compositions is produced on each chip region (101) of a semiconductor wafer (100) by a selective crystal growth using, as a mask, a dielectric film (2a, 2b) having a prescribed pattern (101a). Thereafter, a semiconductor laser and a light modulator that modulates the intensity of laser light emitted from the semiconductor layer are produced in the first semiconductor region and the second semiconductor region, respectively. In this method, the shape of the dielectric mask pattern (2a, 2b) and the shape of the opening (1a) of the mask pattern on each chip region is symmetrical with those on adjacent chip region in the optical waveguide direction of the semiconductor laser.; Therefore, the semiconductor layer is grown on the wafer so that the first and second semiconductor regions of different crystal compositions on each chip region are in contact with the semiconductor region of the same crystal composition on adjacent chip region. As the result, at opposite edges of the chip region in the optical waveguide direction, the crystal compositions of the first and second semiconductor regions are made uniform. |
| 公开日期 | 1997-08-13 |
| 申请日期 | 1994-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44691]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TADASHI, KIMURA,YUTAKA, MIHASHI,KATUHIKO, GOTOH,et al. Method of fabricating modulator integrated semiconductor laser device. GB2281441B. 1997-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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