HALBLEITERSTRUKTUREN.
文献类型：专利
| 作者 | HOLONYAK NICK JR. URBANA ILLINOIS 61801 US; BURNHAM ROBERT D. PALO ALTO CALIFORNIA 94306 US |
| 发表日期 | 1993-06-24 |
| 专利号 | DE3785859D1 |
| 著作权人 | XEROX CORP |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | HALBLEITERSTRUKTUREN. |
| 英文摘要 | The semiconductor structure comprises a single crystal support (12) of low defect density, with selected areas of the crystal having dislocation defects in it. At least one semiconductor layer includes at least one active well and one barrier, epitaxially deposited on the support. The dislocation defects in the support has propagated into contiguous areas of the layer during the epitaxial deposition, where the contiguous areas have a higher dislocation density compared with remaining regions of layer. A disordered alloy is produced in the contiguous areas upon annealing of the structure, the effective rate of disordered conversion in the contiguous areas having been greater than that of the remaining areas because of the dislocation of defects. The disordered alloy regions exhibits higher band gap and higher refracture index properties compared with the remaining areas. |
| 公开日期 | 1993-06-24 |
| 申请日期 | 1987-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44699]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORP |
| 推荐引用方式 GB/T 7714 | HOLONYAK NICK JR. URBANA ILLINOIS 61801 US,BURNHAM ROBERT D. PALO ALTO CALIFORNIA 94306 US. HALBLEITERSTRUKTUREN.. DE3785859D1. 1993-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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