光出力モニタ付半導体レ-ザ
文献类型：专利
| 作者 | 福田 光男; 野口 悦男; 中野 純一; 中野 好典; 植木 峰雄; 都築 信頼 |
| 发表日期 | 1995-11-13 |
| 专利号 | JP1995105555B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光出力モニタ付半導体レ-ザ |
| 英文摘要 | PURPOSE:To efficiently photodetect monitoring light from a laser and to eliminate reflecting noise by using a layer which is not adjacent to an active layer having the same band gap energy as that of the active layer or smaller than that as a photodetection layer and forming a p-n junction of a layer having different conductivity from the photodetection layer and the photodetection layer to form a photodetector. CONSTITUTION:An n-type Inp clad layer 22, an InGaAsP active layer 23, a p-type InP clad layer 24, a p-type InGaAsP cap layer 25 and an n-type InGaAsP layer 26 are sequentially continuously crystal-grown by a liquid growth method on an n-type InP substrate 21, the layer 26 is partly and selectively etched, and a separating groove 27 which arrives at the layer 22 is formed, for example, by reactive etching. On a photodetector 2 side, a p-type InGaAsP layer 25, which is not disposed adjacent to the layer 23' but having a band gap energy equal to or lower than that of the layer 23' is used as a photodetection layer, and a P-n junction 31 is formed to the layer 26' having different conductivity type on the photodetection layer. |
| 公开日期 | 1995-11-13 |
| 申请日期 | 1986-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44701]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 福田 光男,野口 悦男,中野 純一,等. 光出力モニタ付半導体レ-ザ. JP1995105555B2. 1995-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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