Single wavelength semiconductor laser
文献类型：专利
| 作者 | OHKURA, YUJI |
| 发表日期 | 1989-07-11 |
| 专利号 | US4847857 |
| 著作权人 | MITSUBISHI DENKI KABISHIKI KAISHA, 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Single wavelength semiconductor laser |
| 英文摘要 | In a single wavelength oscillation semiconductor laser having a diffraction grating at the active region, the coupling coefficient between the light and the diffraction grating is low within the laser and high in the neighborhood of the resonator end surface. The amplitude of the diffraction grating is low within the laser and high in the neighborhood of the resonator end surface, or the active layer or the guide layer is thick within the laser and thin in the neighborhood of the resonator end surface. Thus, the laser oscillates at a single wavelength even at high power output operation. |
| 公开日期 | 1989-07-11 |
| 申请日期 | 1988-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44702]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABISHIKI KAISHA, 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, JAPAN |
| 推荐引用方式 GB/T 7714 | OHKURA, YUJI. Single wavelength semiconductor laser. US4847857. 1989-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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