Ring resonator based narrow-linewidth semiconductor lasers
文献类型：专利
| 作者 | KSENDZOV, ALEXANDER |
| 发表日期 | 2005-02-15 |
| 专利号 | US6856641 |
| 著作权人 | CALIFORNIA INSTITUTE OF TECHNOLOGY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Ring resonator based narrow-linewidth semiconductor lasers |
| 英文摘要 | The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO2/SiON/SiO2 waveguide technology. |
| 公开日期 | 2005-02-15 |
| 申请日期 | 2002-01-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44703]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CALIFORNIA INSTITUTE OF TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | KSENDZOV, ALEXANDER. Ring resonator based narrow-linewidth semiconductor lasers. US6856641. 2005-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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