Semiconductor device having superlattice structure
文献类型：专利
| 作者 | DIL, JAN G. |
| 发表日期 | 1986-07-29 |
| 专利号 | US4603340 |
| 著作权人 | U.S. PHILIPS CORPORATION 100 EAST 42ND STREET NEW YORK NY 10017 A CORP OF |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device having superlattice structure |
| 英文摘要 | When two indirect only slightly different semiconductor materials having a suitable band gap, for example, AlAs and Al0.8Ga0.2As, are grown epitaxially one onto the other in layers of a few unit cell layers thick, the electronic band structures are folded so that the indirect minimum of the conduction band is displaced from the edge of the Brillouin zone to the center. The two indirect materials then constitute a superlattice with a band transition with a band gap of 2.2 eV. |
| 公开日期 | 1986-07-29 |
| 申请日期 | 1984-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44705]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | U.S. PHILIPS CORPORATION 100 EAST 42ND STREET NEW YORK NY 10017 A CORP OF |
| 推荐引用方式 GB/T 7714 | DIL, JAN G.. Semiconductor device having superlattice structure. US4603340. 1986-07-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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