Semiconductor laser and a manufacturing method for the same
文献类型：专利
| 作者 | FUKUHISA, TOSHIYA; YOSHIKAWA, AKIO |
| 发表日期 | 2005-10-05 |
| 专利号 | EP1035624B1 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and a manufacturing method for the same |
| 英文摘要 | A semiconductor laser, includes: a first cladding layer; an active layer that is formed on top of the first cladding layer; a second cladding layer that is formed on top of the active layer and has a different type of conductivity to the first cladding layer; an etch-stop layer that is formed on top of the second cladding layer and has a same type of conductivity as the second cladding layer; and a light-confining construction that is formed on top of the etch-stop layer by an etching process. The etch-stop layer has a surface part that contacts the light-confining construction. This surface part is composed of an (AlxGa1-x)yIn1-yP semiconductor, where 0.2≤x<0.7 and 0 |
| 公开日期 | 2005-10-05 |
| 申请日期 | 2000-02-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44716]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | FUKUHISA, TOSHIYA,YOSHIKAWA, AKIO. Semiconductor laser and a manufacturing method for the same. EP1035624B1. 2005-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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