Semiconductor saturable absorber device, and laser
文献类型：专利
| 作者 | WEINGARTEN, KURT; SPUEHLER, GABRIEL J.; KELLER, URSULA; THOMAS, DAVID STEPHEN |
| 发表日期 | 2004-11-30 |
| 专利号 | US6826219 |
| 著作权人 | LUMENTUM SWITZERLAND AG |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor saturable absorber device, and laser |
| 英文摘要 | According to the invention, a semiconductor saturable absorber mirror device for reflecting at least a proportion of electromagnetic radiation of essentially one given optical frequency impinging on said device, comprises a substrate with a Bragg reflector, and on top of this Bragg reflector a layered structure with at least one layer with saturably absorbing semiconductor material. A low index dielectric coating layer is placed on said outermost surface of said structure. The Bragg reflector and said layered structure are designed in a manner that the field intensity of radiation of said given frequency takes up a maximum at or near the interface between said structure and said dielectric material. The thickness of said dielectric coating layer may be varied and may for example be a quarter of a wavelength of said electromagnetic radiation in the dielectric material. |
| 公开日期 | 2004-11-30 |
| 申请日期 | 2002-03-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM SWITZERLAND AG |
| 推荐引用方式 GB/T 7714 | WEINGARTEN, KURT,SPUEHLER, GABRIEL J.,KELLER, URSULA,et al. Semiconductor saturable absorber device, and laser. US6826219. 2004-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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