Wafer having top and bottom emitting vertical-cavity lasers
文献类型：专利
| 作者 | CHIROVSKY, LEO MARIA; CUNNINGHAM, JOHN EDWARD; GOOSSEN, KEITH WAYNE; HUI, SANGHEE PARK; TSENG, BETTY JYUE |
| 发表日期 | 2001-04-24 |
| 专利号 | US6222206 |
| 著作权人 | LUCENT TECHNOLOGIES, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Wafer having top and bottom emitting vertical-cavity lasers |
| 英文摘要 | A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer. |
| 公开日期 | 2001-04-24 |
| 申请日期 | 1998-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44931]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES, INC. |
| 推荐引用方式 GB/T 7714 | CHIROVSKY, LEO MARIA,CUNNINGHAM, JOHN EDWARD,GOOSSEN, KEITH WAYNE,et al. Wafer having top and bottom emitting vertical-cavity lasers. US6222206. 2001-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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