中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor wafer testing method and apparatus

文献类型:专利

作者KUCHTA, DANIEL M.
发表日期1999-04-06
专利号US5891746
著作权人INTERNATIONAL BUSINESS MACHINES CORPORATION
国家美国
文献子类授权发明
其他题名Semiconductor wafer testing method and apparatus
英文摘要The present invention is a structure and method to reduce the inductance of the AC test signal path used for testing an electrical device contained within a semiconductor wafer. This extends the frequency range of testing. It enables testing the device's performance characteristics at higher frequencies than otherwise useable. It is particularly directed for testing on-wafer VCSELs. The method provides to the electrical device the characteristics of a microwave bias-tee device. An on wafer capacitor is designed into the environment of the electrical device enabling the formation and use of the three ports of a bias-tee. Preferably, the bias-tee is formed in a manner not requiring the addition of processing steps to the wafer manufacturing process. The method further provides a way to increase the capacitance of the on-wafer capacitor.
公开日期1999-04-06
申请日期1998-03-10
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/45036]  
专题半导体激光器专利数据库
作者单位INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式
GB/T 7714
KUCHTA, DANIEL M.. Semiconductor wafer testing method and apparatus. US5891746. 1999-04-06.

入库方式: OAI收割

来源:西安光学精密机械研究所

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