中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Linear polarization of semiconductor laser

文献类型:专利

作者SWIRHUN, STANLEY E.; O'NEILL, JR., THOMAS J.
发表日期1995-05-02
专利号US5412680
著作权人OPTICAL COMMUNICATION PRODUCTS, INC.
国家美国
文献子类授权发明
其他题名Linear polarization of semiconductor laser
英文摘要This invention discloses vertical cavity surface emitting lasers (VCSELs) formed to emit optical radiation that has a controlled direction of polarization. In one embodiment, a VCSEL has an active region that contains at least one strained semiconductor layer which has a preferred direction of electrical conductivity due to the strain. As a result, the optical radiation emitted from the VCSEL has a direction of polarization that is parallel to the preferred direction of conductivity. In another embodiment, a VCSEL has an elongated active region, and the direction of polarization of the radiation emitted from the VCSEL is parallel to a longitudinal axis of the active region. The invention also discloses a VCSEL array comprising vertical cavity surface emitting lasers having elongated active regions. By forming the elongated active regions parallel to each other, the array emits optical radiation having parallel polarization. Alternatively, the array may be formed so that the elongated active regions of adjacent VCSELs of the array are perpendicular to each other. As a result, adjacent VCSELs in the array emit optical radiation having orthogonal polarizations.
公开日期1995-05-02
申请日期1994-03-18
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/45063]  
专题半导体激光器专利数据库
作者单位OPTICAL COMMUNICATION PRODUCTS, INC.
推荐引用方式
GB/T 7714
SWIRHUN, STANLEY E.,O'NEILL, JR., THOMAS J.. Linear polarization of semiconductor laser. US5412680. 1995-05-02.

入库方式: OAI收割

来源:西安光学精密机械研究所

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