Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
文献类型：专利
| 作者 | KNEISSL, MICHAEL A.; KIESEL, PETER; VAN DE WALLE, CHRISTIAN G. |
| 发表日期 | 2003-02-04 |
| 专利号 | US6515308 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
| 英文摘要 | A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting diode structure. The p-n tunnel junction reduces the number of p-type semiconductor layers in the nitride based semiconductor VCSEL or LED structure which reduces the distributed loss, reduces the threshold current densities, reduces the overall series resistance and improves the structural quality of the laser by allowing higher growth temperatures. |
| 公开日期 | 2003-02-04 |
| 申请日期 | 2001-12-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45088]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | KNEISSL, MICHAEL A.,KIESEL, PETER,VAN DE WALLE, CHRISTIAN G.. Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection. US6515308. 2003-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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