All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics
文献类型：期刊论文
| 作者 | Zhao Y(赵岩) ; Di ZA(狄重安) ; Gao XK(高希珂) ; Hu YB(胡云宾) ; Guo YL(郭云龙) ; Zhang L(张磊) ; Liu YQ(刘云圻) ; Wang JZ(王吉政) ; Hu WP(胡文平) ; Zhu DB(朱道本) |
| 刊名 | Adv. Mater.
 |
| 出版日期 | 2011 |
| 卷号 | 23期号:21页码:2448-2453 |
| ISSN号 | 0935-9648 |
| 其他题名 | 全溶液制备高性能的n-沟道有机晶体管和电路: 面向低成本的空气电子学 |
| 英文摘要 | Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm(2) V(-1) s(-1) are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air. |
| 学科主题 | 高分子化学 |
| 收录类别 | SCI |
| 原文出处 | http://dx.doi.org/10.1002/adma.201004588 |
| 语种 | 英语 |
| WOS记录号 | WOS:000291732000008 |
| 公开日期 | 2013-08-21 |
| 源URL | [http://202.127.28.38/handle/331003/27817]  |
| 专题 | 上海有机化学研究所_上海有机化学研究所 |
| 推荐引用方式 GB/T 7714 | Zhao Y,Di ZA,Gao XK,et al. All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics[J]. Adv. Mater.,2011,23(21):2448-2453. |
| APA | 赵岩.,狄重安.,高希珂.,胡云宾.,郭云龙.,...&朱道本.(2011).All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics.Adv. Mater.,23(21),2448-2453. |
| MLA | 赵岩,et al."All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics".Adv. Mater. 23.21(2011):2448-2453. |
入库方式： OAI收割
来源：上海有机化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。