Semiconductor device having a vertical cavity surface emitting laser (VCSEL) and a protection diode integrated therein and having reduced capacitance to allow the VCSEL to achieve high operating speeds
文献类型：专利
| 作者 | MURTY, RAMANA M. V. |
| 发表日期 | 2013-07-16 |
| 专利号 | US8488645 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device having a vertical cavity surface emitting laser (VCSEL) and a protection diode integrated therein and having reduced capacitance to allow the VCSEL to achieve high operating speeds |
| 英文摘要 | A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by the protection diode. Reducing the amount of capacitance that is introduced by the protection diode allows the VCSEL to operate at higher speeds. |
| 公开日期 | 2013-07-16 |
| 申请日期 | 2011-07-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45174]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | MURTY, RAMANA M. V.. Semiconductor device having a vertical cavity surface emitting laser (VCSEL) and a protection diode integrated therein and having reduced capacitance to allow the VCSEL to achieve high operating speeds. US8488645. 2013-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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