Monolithic power monitor and wavelength detector
文献类型：专利
| 作者 | DAGHIGHIAN, HENRY M.; MCCALLION, KEVIN J. |
| 发表日期 | 2011-12-13 |
| 专利号 | US8078063 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Monolithic power monitor and wavelength detector |
| 英文摘要 | Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers. |
| 公开日期 | 2011-12-13 |
| 申请日期 | 2008-02-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45312]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | DAGHIGHIAN, HENRY M.,MCCALLION, KEVIN J.. Monolithic power monitor and wavelength detector. US8078063. 2011-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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