Visible-wavelength semiconductor lasers and arrays
文献类型：专利
| 作者 | SCHNEIDER, JR., RICHARD P.; CRAWFORD, MARY H. |
| 发表日期 | 1996-09-17 |
| 专利号 | US5557627 |
| 著作权人 | ENERGY, UNITED STATES DEPARTMENT OF |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Visible-wavelength semiconductor lasers and arrays |
| 英文摘要 | A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1 lambda ) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. |
| 公开日期 | 1996-09-17 |
| 申请日期 | 1995-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45470]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ENERGY, UNITED STATES DEPARTMENT OF |
| 推荐引用方式 GB/T 7714 | SCHNEIDER, JR., RICHARD P.,CRAWFORD, MARY H.. Visible-wavelength semiconductor lasers and arrays. US5557627. 1996-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。