Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus
文献类型：专利
| ; | |
| 作者 | HARA, KEI; KAMINISHI, MORIMASA |
| 发表日期 | 2011-08-02 ; 2011-08-02 |
| 专利号 | US7991033 ; US7991033 |
| 著作权人 | RICOH COMPANY, LTD. ; RICOH COMPANY, LTD. |
| 国家 | 美国 ; 美国 |
| 文献子类 | 授权发明 ; 授权发明 |
| 其他题名 | Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus ; Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus |
| 英文摘要 | A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed on the semiconductor substrate, and a mesa structure. The mesa structure includes an active layer, a selective oxidization layer that includes a current confined structure, and an upper reflecting mirror. A lower electrode is connected to the semiconductor substrate, and an upper electrode is connected to the upper reflecting mirror. The VCSEL emits laser light perpendicularly to the plane of the semiconductor substrate when an electric current flows between the upper electrode and the lower electrode. The semiconductor substrate is inclined with respect to (100) plane. The active layer includes a quantum well layer having a compressive strain with respect to the substrate, and a spacer layer. The spacer layer has either a compressive strain or a tensile strain with respect to the semiconductor substrate.; A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed on the semiconductor substrate, and a mesa structure. The mesa structure includes an active layer, a selective oxidization layer that includes a current confined structure, and an upper reflecting mirror. A lower electrode is connected to the semiconductor substrate, and an upper electrode is connected to the upper reflecting mirror. The VCSEL emits laser light perpendicularly to the plane of the semiconductor substrate when an electric current flows between the upper electrode and the lower electrode. The semiconductor substrate is inclined with respect to (100) plane. The active layer includes a quantum well layer having a compressive strain with respect to the substrate, and a spacer layer. The spacer layer has either a compressive strain or a tensile strain with respect to the semiconductor substrate. |
| 公开日期 | 2011-08-02 ; 2011-08-02 |
| 申请日期 | 2009-06-02 ; 2009-06-02 |
| 状态 | 授权 ; 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45556]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH COMPANY, LTD. |
| 推荐引用方式 GB/T 7714 | HARA, KEI,KAMINISHI, MORIMASA. Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus, Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus. US7991033, US7991033. 2011-08-02, 2011-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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