Nitride semiconductor laser chip
文献类型：专利
| 作者 | KAWAGUCHI, YOSHINOBU; KAMIKAWA, TAKESHI |
| 发表日期 | 2013-10-29 |
| 专利号 | US8571083 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser chip |
| 英文摘要 | A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region. |
| 公开日期 | 2013-10-29 |
| 申请日期 | 2010-05-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45608]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI, YOSHINOBU,KAMIKAWA, TAKESHI. Nitride semiconductor laser chip. US8571083. 2013-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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