Integrated semiconductor laser
文献类型：专利
| 作者 | GOTO, KATSUHIKO |
| 发表日期 | 1992-10-20 |
| 专利号 | US5157680 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated semiconductor laser |
| 英文摘要 | An integrated semiconductor laser including at least two active regions, each active region oscillating at a respective, different wavelength, the integrated semiconductor laser including a common semiconductor substrate of a first conductivity type; a semiconductor first cladding layer of the first conductivity type disposed on the substrate; at least two spaced apart active regions disposed on the first cladding layer within a common active layer, the active layer including at least one compound semiconductor quantum well layer sandwiched between compound semiconductor quantum barrier layers, the quantum barrier layers having a larger energy band gap than and including at least one more element than the quantum well layer, the at least one more element of the quantum barrier layers penetrating farther into the quantum well layer at the first active region than into the quantum well layer at the second active region; a second cladding layer disposed on each of the first and second active regions; and respective electrical contacts to the first and second active regions through the first and second cladding layers disposed on opposite sides of each of the first and second active regions. |
| 公开日期 | 1992-10-20 |
| 申请日期 | 1991-10-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45610]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | GOTO, KATSUHIKO. Integrated semiconductor laser. US5157680. 1992-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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