Method of forming a semiconductor laser
文献类型：专利
| 作者 | SCIFRES, DONALD R.; WELCH, DAVID; CROSS, PETER; STREIFER, WILLIAM |
| 发表日期 | 1990-06-12 |
| 专利号 | US4933301 |
| 著作权人 | SPECTRA DIODE LABORATORIES, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of forming a semiconductor laser |
| 英文摘要 | A method of making semiconductor laser arrays having an impurity disordered pattern of waveguides at least some of which are directly joined at branching junctions. The region near the branching junctions provides a phase boundary condition in which lightwaves propagating in adjacent waveguides are in phase. Using one impurity dose and one disordering depth in a first portion of the pattern and another in a second portion of the pattern provides a combination of strong and weak waveguiding with strong waveguides that eliminate evanescent coupling from occurring at least in the branching junction regions, and with weak guides near one or both end facets permitting evanescent coupling. The evanescent coupling between adjacent weak waveguides preserves the in phase relationship that was established in the Y-junction regions, resulting in a diffraction limited single lobe far field output. Alternatively, even without evanescent coupling, the modes can adjust their phases in the weak waveguides, where the propagation constant is less tightly specified by the geometry. |
| 公开日期 | 1990-06-12 |
| 申请日期 | 1989-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45617]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SPECTRA DIODE LABORATORIES, INC. |
| 推荐引用方式 GB/T 7714 | SCIFRES, DONALD R.,WELCH, DAVID,CROSS, PETER,et al. Method of forming a semiconductor laser. US4933301. 1990-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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