Native green laser semiconductor devices
文献类型：专利
| 作者 | BHAT, RAJARAM; GALLINAT, CHAD STEPHEN; NAPIERALA, JEROME; SIZOV, DMITRY; ZAH, CHUNG-EN |
| 发表日期 | 2011-06-21 |
| 专利号 | US7965752 |
| 著作权人 | THORLABS QUANTUM ELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Native green laser semiconductor devices |
| 英文摘要 | A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range. |
| 公开日期 | 2011-06-21 |
| 申请日期 | 2009-11-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45622]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THORLABS QUANTUM ELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | BHAT, RAJARAM,GALLINAT, CHAD STEPHEN,NAPIERALA, JEROME,et al. Native green laser semiconductor devices. US7965752. 2011-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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