Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser
文献类型：专利
| 作者 | LIU, YET-ZEN; HONG, CHI-SHAIN; DAPKUS, P. DANIAL; COLEMAN, JAMES J. |
| 发表日期 | 1985-05-14 |
| 专利号 | US4517674 |
| 著作权人 | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser |
| 英文摘要 | A zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser device and a method of making the same. A double heterostructure layered structure including a p-type GaAs active layer sandwiched between two n-type AlGaAs confinement layers is formed on a substrate. A p-type zinc diffused stripe region having a U-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer down to at least the surface of intersection between the active layer and the lower confinement layer. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc from a source through a slot in a diffusion mask. The zinc diffused into the device is driven in by heating the device in the absence of the zinc source. |
| 公开日期 | 1985-05-14 |
| 申请日期 | 1982-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45623]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 推荐引用方式 GB/T 7714 | LIU, YET-ZEN,HONG, CHI-SHAIN,DAPKUS, P. DANIAL,et al. Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser. US4517674. 1985-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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