Integrated semiconductor laser device
文献类型：专利
| 作者 | SHIMADA, NAOHIRO |
| 发表日期 | 1992-10-20 |
| 专利号 | US5157682 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated semiconductor laser device |
| 英文摘要 | A semiconductor laser device for oscillating laser beams having different wavelengths from adjacent regions includes an n-type first cladding layer, a first active layer, a p-type second cladding layer, a p-type first contact layer, a p-type third cladding layer, a second active layer, an n-type fourth cladding layer, and an n-type second contact layer in this order from an n-type substrate. The first and second electrodes are arranged on the first and second contact layers, respectively, and the third electrode is arranged on the lower surface of the substrate. A difference in energy gaps of the second cladding layer and the first contact layer is so large that no current flows across the second cladding layer and the first contact layer, and a difference in energy gaps of the third cladding layer and the first contact layer is so large that no current flows across the third cladding layer and the first contact layer. P-type intermediate energy-gap layers are formed into stripes between the second cladding layer and the first contact layer and between the third cladding layer and the first contact layer, respectively, and current paths are respectively formed through the intermediate energy-gap layers. The two current paths are substantially aligned to each other in a vertical direction. |
| 公开日期 | 1992-10-20 |
| 申请日期 | 1991-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45626]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | SHIMADA, NAOHIRO. Integrated semiconductor laser device. US5157682. 1992-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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