Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element
文献类型：专利
| 作者 | SHIOJIMA, TAKESHI; YABUSAKI, KEIICHI; OHKUBO, MICHIO |
| 发表日期 | 2005-02-08 |
| 专利号 | US6853664 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element |
| 英文摘要 | The semiconductor laser element comprises, from bottom to top, the p-AlxGa1−xAs upper clad layer, p-AlyGa1−yAs resistance control layer, and p-GaAs cap layer (where x>y>0.2). A portion of only the resistance control layer and cap layer is selectively etched. The etchant used for this etching is a mixture of organic acid and hydrogen peroxide based mixture, has such a composition such that the ratio of dissolution rate of the upper clad layer to the cap layer is between 10 and 20, and pH is between 7.4 and 7.6. |
| 公开日期 | 2005-02-08 |
| 申请日期 | 2003-02-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45629]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHIOJIMA, TAKESHI,YABUSAKI, KEIICHI,OHKUBO, MICHIO. Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element. US6853664. 2005-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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