Method for fabricating junction lasers having lateral current confinement
文献类型：专利
| 作者 | LOGAN, RALPH A.; TSANG, WON-TIEN |
| 发表日期 | 1980-03-25 |
| 专利号 | US4194933 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating junction lasers having lateral current confinement |
| 英文摘要 | Described is a method for fabricating a stripe geometry double heterostructure (DH) junction laser in which lateral current confinement is acheived by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for example, and a layer of p-AlGaAs is then grown by LPE so that nucleation does not occur on the top of the mesa. Laterally spaced zones of p-AlGaAs are thus formed on either side of the mesa. An n-p-p or n-n-p DH is then grown so that the interface between the p-AlGaAs layers and the first n-layer of the DH forms a pair of laterally spaced p-n junctions separated by the mesa. When the light-emitting p-n junction in the DH active region is forward biased, the air of spaced junctions are reverse biased so that pumping current is constrained to flow through the active region in a narrow channel to the mesa. Further lateral current confinement is achieved by forming on the upper DH surface a second air of reverse biased p-n junctions separated by a window in alignment with the mesa. |
| 公开日期 | 1980-03-25 |
| 申请日期 | 1979-05-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45640]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 推荐引用方式 GB/T 7714 | LOGAN, RALPH A.,TSANG, WON-TIEN. Method for fabricating junction lasers having lateral current confinement. US4194933. 1980-03-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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