Integrated semiconductor laser apparatus
文献类型：专利
| 作者 | OKAMOTO, KAZUYA; YAMADA, ATSUSHI; NAKANO, YOSHIAKI; TADA, KUNIO |
| 发表日期 | 1998-07-28 |
| 专利号 | US5787105 |
| 著作权人 | NIKON CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated semiconductor laser apparatus |
| 英文摘要 | An integrated semiconductor laser apparatus is constructed in such an arrangement that a core layer is located in the proximity of an active layer so as to be in an evanescent-field area of light propagating in the active layer and that a carrier concentration of a second cladding layer is higher than that of a first cladding layer. Thus, most evanescent waves of light propagating in the core layer propagate in the first cladding layer of the low carrier concentration. Since the rate of evanescent waves absorbed by carriers is very low, the integrated semiconductor laser apparatus can propagate the light with small losses. |
| 公开日期 | 1998-07-28 |
| 申请日期 | 1996-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45641]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIKON CORPORATION |
| 推荐引用方式 GB/T 7714 | OKAMOTO, KAZUYA,YAMADA, ATSUSHI,NAKANO, YOSHIAKI,et al. Integrated semiconductor laser apparatus. US5787105. 1998-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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